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Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

: Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.

JEDEC, Arlington/Va.:
JEDEC 25th Annual Reliability of Compound Semiconductors Workshop, ROCS 2010. Proceedings : Portland, OR, May 17, 2010
Portland/Or., 2010
Reliability of Compound Semiconductors Workshop (ROCS) <25, 2010, Portland/Or.>
Conference Paper
Fraunhofer IAF ()

The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We calculate the electric field strength in one of the most sensitive regions of the device and also apply a drain-voltage step-stress method to our device and change the field amplitude in the gate-drain-region. This procedure enables us to assign technological parameters mitigating the peak field strength and improve reliability.