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2.1: Field electron emission properties of n-type single crystal cubic boron nitride

: Yamada, T.; Nebel, C.E.; Taniguchi, T.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
23rd International Vacuum Nanoelectronics Conference, IVNC 2010 : 26-30 July 2010, Palo Alto, CA
New York, NY: IEEE, 2010
ISBN: 978-1-4244-7889-7
ISBN: 978-1-4244-7887-3
International Vacuum Nanoelectronics Conference (IVNC) <23, 2010, Palo Alto/Calif.>
Conference Paper
Fraunhofer IAF ()

We will report on the field emission properties of single crystal n-type cubic boron nitride (c-BN) for the first time. Vacuum annealed positive electron affinity (PEA) surface shows lower threshold voltages compared to Hterminated negative electron affinity (NEA) surface. An internal barrier height of c-BN surface with NEA was estimated to be 3.5 eV according to the Schottky barrier lowering model, which prevents electrons from approaching to the emitting surface. A higher electric field is required to reduce the internal barrier for emitting electrons compared to a small PEA surface. From the Fowler-Nordheim plots, the PEA was calculated to be about 0.6 eV, which dominates the electron emission from the vacuum annealed surface.