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GaN power FETs for next generation mobile communication systems

: Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O.

5th European Microwave Integrated Circuits Conference, EuMIC 2010. Proceedings : 27-28 September 2010, Paris, France, European Microwave Week 2010
London: Horizon House, 2010
ISBN: 978-2-87487-017-0
ISBN: 978-1-424-47231-4
European Microwave Integrated Circuits Conference (EuMIC) <5, 2010, Paris>
Conference Paper
Fraunhofer IAF ()

This paper presents the RF-performance of Al-GaN/GaN high electron mobility transistors (HEMT) for applications at L-/S-band frequencies. The powerbars provide a linear gain of 20.3 dB with 90W output power operated at 50V drain voltage in cw-operation with a maximum drain efficency of 59% at 2.14 GHz. This gain level is competititve to state-of-the-art LDMOS.