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Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes

: Rahimi, Z.; Erdmann, A.; Evanschitzky, P.; Pflaum, C.


Behringer, U.F.W. ; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
26th European Mask and Lithography Conference : 18 - 20 January 2010, Grenoble, France
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7545)
ISBN: 978-0-8194-7941-9
Paper 75450C
European Mask and Lithography Conference (EMLC) <26, 2010, Grenoble>
Conference Paper
Fraunhofer IISB ()
rigorous EMF simulation; mask; light diffraction; critical dimension; finite integration technique (FIT)

We present a finite integration technique (RIT) simulator for modelling light diffraction from lithographic masks with complex shapes. This method has high flexibility in geometrical modelling and treating curved boundaries. The inherent feature of FIT allows more accurate rigorous electromagnetic field simulation in complex structures. This technique is also suited for fast EMF simulations and large 3D problems because of its parallelisation potential. We applied this method to investigate the effect of various mask shapes on lithographically printed images. The imaging results were obtained using Dr.LiTHO's imaging simulator. We demonstrate results for attenuated phase-shift mask (PSM) with different absorber deviations from ideal shapes such as footing and oblique sidewalls.