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AlGaN/GaN-HEMTs for power applications up to 40 GHz

AlGaN/GaN-HEMTs für Leistungsanwendungen bis 40 GHz
 
: Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.

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Lunardi, L. ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Lester Eastman Conference on High Performance Devices 2002
Piscataway, NJ: IEEE, 2002
ISBN: 0-7803-7478-9
pp.502-504
Lester Eastman Conference on High Performance Devices <2002, Delaware>
English
Conference Paper
Fraunhofer IAF ()
GaN; HEMT; microwave power amplifier; Mikrowellen-Leistungsverstärker; FET

Abstract
A 0.15 µm T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 µm gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f(ind t) and f(ind max) of 65 GHz and 149 GHz, respectively. Large periphery 720 µm gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the K(ind a)-band.

: http://publica.fraunhofer.de/documents/N-14556.html