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Contactless electron mobility evaluation of semi-insulating GaAs and InP wafers

Kontaktfreie Bestimmung der Elektronenbeweglichkeit in semi-insolierende GaAs- und InP-Substrate
 
: Stibal, R.; Kretzer, U.; Jantz, W.

GaAs MANTECH Conference 2002. Digest of papers : April 8 - 11th 2002, Sheraton San Diego Hotel and Marina, San Diego, California, USA. Compound semiconductor manufacturing: new challenges, great opportunities
St. Louis: GaAS MANTECH Inc., 2002
ISBN: 1-893580-03-2
pp.75-78
International Conference on Compound Semiconductor MANufacturing TECHnology (GaAs MANTECH) <17, 2002, San Diego/Calif.>
English
Conference Paper
Fraunhofer IAF ()
electron mobility; Elektronen-Beweglichkeit; contactless measurement; kontaktfreie Messung; semi-insulating; semi-isolierend; GaAS; InP; wafer; substrat

Abstract
An innovative procedure to evaluate the electron mobility of semi-insulating GaAs and InP wafers is presented. It is based on a capacitive contactless technique previously developed for resistivity mapping (COREMA). The measurement is consecutively performed with and without a magnetic field. The correlation with Hall data is satisfactory, whereas the agreement with calculated drift mobility is excellent. The new technique is superior to the conventional procedure in regard of cost, speed, nondestructiveness, reproducibility and lateral resolution. A system design meeting the requirements of eventual routine industrial application is described.

: http://publica.fraunhofer.de/documents/N-14548.html