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Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Wachstum von großflächigen AlGaN/GAN HEMTs auf semiisolierenden siliziumcarbide Substraten
: Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K.


Physica status solidi. B 194 (2002), No.2, pp.460-463
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer IAF ()
AlGaN; GaN; HEMT; SiC; MOCVD; power amplifier; Leistungstransistor

Large periphery Al(0.25)Ga(0.75)N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1,2 A/mm and intrinsic transconductances of 360mS/mm. Depending on device size the maximum frequency of oscillation f(max) varies from 27-79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8W is achieved at 2GHz.