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Waveguide design of green InGaN laser diodes

: Lermer, T.; Schillgalies, M.; Breidenassel, A.; Queren, D.; Eichler, C.; Avramescu, A.; Müller, J.; Scheibenzuber, W.; Schwarz, U.T.; Lutgen, S.; Strauss, U.


Physica status solidi. A 207 (2010), No.6, pp.1328-1331
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
beam characteristic; design; InGaN; Laser; waveguide

In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c-planeGaNsubstrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and designs for optimized WG of green InGaN laser diodes using a 1D transfer matrix simulation tool.