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Advanced metamorphic HEMT submillimeter-wave monolithic integrated circuits and modules up to 320 GHz

 
: Schlechtweg, M.; Tessmann, A.; Leuther, A.; Kallfass, I.; Hurm, V.; Massler, H.; Rosenzweig, J.; Zink, M.; Riessle, M.; Lösch, R.

Grallert, H.-J.:
6th Joint Symposium on Opto- & Microelectronic Devices and Circuits, SODC 2010 : 4. bis 7. Oktober 2010, Berlin
Berlin, 2010
pp.143-146
Joint Symposium on Opto- & Microelectronic Devices and Circuits (SODC) <6, 2010, Berlin>
English
Conference Paper
Fraunhofer IAF ()
metamorpher Transistor mit hoher Elektronenbeweglichkeit; metamorphic high electron mobility transistor; metamorpher HEMT; MHEMT; high-gain amplifier; H-band; submillimeter-wave monolithic integrated circuit; S-MMIC; grounded coplanar waveguide; GCPW; waveguide-to-microstrip transition

: http://publica.fraunhofer.de/documents/N-144939.html