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Quantitative iron concentrating imaging

 
: Schubert, M.C.; Habenicht, H.; Kerler, M.J.; Warta, W.

:

Kittler, M.:
Gettering and defect engineering in semiconductor technology XIII, GADEST 2009 : Proceedings of the 13th international autumn meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
Dürnten: Trans Tech Publications, 2010 (Diffusion and defect data. B, Solid state phenomena 156/158)
ISBN: 978-3-908451-74-7
ISSN: 1012-0394
pp.407-412
International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology (GADEST) <13, 2009, Berlin>
English
Conference Paper
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Abstract
Iron concentration imaging has been proven to be a very valuable analysis technique for silicon material characterization. We applied this method to determine the influence of a low temperature annealing after surface passivation on the interstitial iron concentration. The influence of hydrogen passivation induced by silicon nitride passivation is estimated by comparison of silicon nitride and aluminum oxide passivation. The second part of this work deals with systematic errors inherent to the iron concentration technique. Simulations show under which conditions errors occur due to the non-uniformity of carrier profiles.

: http://publica.fraunhofer.de/documents/N-143854.html