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Identification of pre-breakdown mechanism of silicon solar cells at low reverse voltages

: Lausch, D.; Petter, K.; Bakowskie, R.; Czekalla, C.; Lenzner, J.; Wenckstern, H. von; Grundmann, M.


Applied Physics Letters 97 (2010), No.7, Art. 073506, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer CSP ()

The local breakdown of commercial silicon solar cells occurring at reverse voltages of only 3-4 V has been investigated by means of current-voltage measurements, dark lock-in thermography, and reverse-biased electroluminescence (ReBEL) with a spatial resolution on the micrometer-scale. It is shown that the origin of the local breakdown (so-called type I) can be traced back to a contamination of the wafer surface with Al particles prior to the phosphorous diffusion step. A model is presented explaining that the spectral maximum of ReBEL is within the visible range.