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Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz

: Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.


IEICE Transactions on Electronics E93-C (2010), No.8, pp.1238-1244
ISSN: 0916-8524
Journal Article
Fraunhofer IAF ()
gallium nitride; power amplifier; switch-mode; efficiency

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors' knowledge, this is the first time 2 GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.