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Metamorphic GaInP/GaInAs/Ge triple-junction solar cells with > 41 % efficiency

: Dimroth, F.; Guter, W.; Schöne, J.; Welser, E.; Steiner, M.; Oliva, E.; Wekkeli, A.; Siefer, G.; Philipps, S.P.; Bett, A.W.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.3 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
Conference Paper
Fraunhofer ISE ()

The use of lattice-mismatched materials offers an additional degree of freedom to the design of an optimum bandgap combination in a multi-junction solar cell. This allows for achieving higher conversion efficiencies compared to state-of-the-art lattice-matched systems if the material quality of the pn-junctions can be kept sufficiently high. Work performed at the Fraunhofer ISE on metamorphic GaInP/GaInAs/Ge triple-junction solar cells with 1.2% lattice-mismatch between the middle and bottom cell recently yielded a new record efficiency of 41.1% under 454-fold concentration of the AM1.5d spectrum. This paper summarizes the main benefits of the metamorphic solar cell approach and discusses some of the challenges associated with the development of this device structure.