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High-efficiency silicon solar cells with intrinsic and doped A-SiCx rear side passivation

 
: Suwito, D.; Janz, S.; Hermle, M.; Glunz, S.W.

:
Fulltext urn:nbn:de:0011-n-1436152 (193 KByte PDF)
MD5 Fingerprint: 4acd518a92b99a4a4b09cb28aeb43245
Created on: 17.8.2012


Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
pp.2197-2201
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
a-SiCx films are used for the electrical passivation of the rear surface of high-efficiency PERC silicon solar cells. The films comprise intrinsic as well as n- and p-doped SiCx layers prepared by adding PH3 or B2H6 to the precursor gases during the Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Two different rear contacting approaches, Laser Fired Contacts (LFC) and plasma etched rear openings with subsequent aluminium evaporation, are used to reveal the impact of the different rear passivation schemes on the solar cell performance. The results indicate that intrinsic and lightly n-doped SiCx layers are well suited for the passivation of highefficiency silicon solar cells, yielding cell efficiencies of up to 20.7%. Furthermore the floating junction behavior of the n-SiCx passivation scheme could be verified, leading to a complete depassivation of the rear side in the case of the LFC approach due to shunting of the rear diode by the aluminium contacts.

: http://publica.fraunhofer.de/documents/N-143615.html