Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Thermally activated p- and n-doped passivation layers

: Seiffe, J.; Suwito, D.; Korte, L.; Hofmann, M.; Janz, S.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-1436110 (102 KByte PDF)
MD5 Fingerprint: 1438301a6ba084edafff2f2c87192ccd
Created on: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Amorphous phosphorus- and boron-doped silicon carbide films are used below a silicon nitride capping layer to passivate p-type silicon. It is shown that the nitride capping layer in combination with a high temperature step similar to a contact firing step – but with lower peak temperature – can significantly improve the passivation quality of boron-doped silicon carbide. In spite of the silicon nitride capping a slight accumulation at the silicon surface is created, which is detected by surface photovoltage measurements (SPV). A second very simple qualitative test in order to verify the disadvantageous existence of inversion conditions underneath a passivation layer is presented and is based on checking whether the depletion region modulation (DRM) affects the low injection lifetime measured via quasi-steady-state photoconductance.