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Influence of depth dependent profiles on carrier density measurements

 
: Schubert, M.C.; Kerler, M.J.; Warta, W.

:
Fulltext urn:nbn:de:0011-n-1436080 (223 KByte PDF)
MD5 Fingerprint: 1b78aa12584b7e09bb63f61433dd3a0a
Created on: 18.8.2012


Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
pp.37-41
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Carrier density is a frequently examined parameter for silicon material characterisation. Besides the detection of the minority carrier lifetime under low injection conditions like QSSPC, CDI/ILM, and PL more advanced material characterisation methods are based on carrier density measurements. Although spatial resolution has been included in many measurement techniques, the depth dependence of the carrier profiles is typically neglected and homogeneous carrier profiles are assumed. This assumption, however, does not hold for many practical cases and may introduce significant systematic errors. In this work, analytical simulations show the expected errors quantitatively. Iron imaging is taken as an example to demonstrate the magnitude of the systematic error. A correction method is provided which accounts for the inhomogeneous carrier profiles.

: http://publica.fraunhofer.de/documents/N-143608.html