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Large-area n-type silicon solar cells with printed contacts and aluminium-alloyed rear emitter

 
: Schmiga, C.; Hörteis, M.; Rauer, M.; Meyer, K.; Lossen, J.; Krokoszinski, H.-J.; Hermle, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-1436074 (395 KByte PDF)
MD5 Fingerprint: 127d54bd1722982f57dfb78519d51d37
Created on: 31.8.2012


Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
pp.1167-1170
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We have further improved our n-type silicon solar cells with full-area screen-printed aluminiumalloyed rear p+ emitter. For our laboratory-type n+np+ back junction solar cells (4 cm2) featuring a high-efficiency front side with evaporated contacts, we have optimised the rear Al-p+ emitter and the phosphorus-diffused n+ front surface field including the antireflection coating. Thereby, we have obtained an increase in the open-circuit voltage of around 15 mV, resulting in excellent Voc values for this cell structure above 640 mV and cell efficiencies of 19.8 %. By applying an industrially feasible front metallisation of aerosol-printed and silver-plated contacts, we have successfully demonstrated the upscaling of our cells to large areas. For our best industrial-type n+np+ solar cell with front and rear printed contacts, we have achieved a record-high efficiency of 18.2 % (148.5 cm2) on n-type phosphorus-doped 10 ?cm monocrystalline silicon material.

: http://publica.fraunhofer.de/documents/N-143607.html