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Firing stable passivation with a-Si/SiNx stack layers for crystalline silicon solar cells

 
: Saint-Cast, P.; Hofmann, M.; Dimitrova, T.; Wagenmann, D.; Rentsch, J.; Preu, R.

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Fulltext urn:nbn:de:0011-n-1436047 (310 KByte PDF)
MD5 Fingerprint: ec1a1e5a038652c15c7b2d64ca36f088
Created on: 16.8.2012


Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
pp.1649-1653
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
This paper describes a stack of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiNx:H) which was developed and characterized with the aim to obtain a firing stable passivation layer. A surface recombination velocity below 40cm s-1 has been obtained after a firing step at 820°C, on highly doped p-type Float Zone (FZ) crystalline silicon wafers. Fourier Transform InfraRed (FTIR) spectroscopy measurements showed that most of the silicon hydrogen bounds (SiH) in the a-Si:H layer are lost after firing independently of the firing stability of the passivation. Capacitance-Voltage (CV) measurements showed that the a-Si:H layer assumed to be intrinsic is, in fact, doped n-type. The measured doping of the layer might result in a field-effect passivation on lowly doped p-type silicon surfaces. However, significant shunt losses can be expected when the stack of layers is applied for rear surface passivation on p-type silicon solar cells.

: http://publica.fraunhofer.de/documents/N-143604.html