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Relevant pinhole characterisation methods for dielectric layers for silicon solar cells

: Saint-Cast, P.; Tanay, F.; Aleman, M.; Reichel, C.; Bartsch, J.; Hofmann, M.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-1436030 (230 KByte PDF)
MD5 Fingerprint: 0ddfbc2293cec028e492c8cbe8ca1ce7
Created on: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A wide range of dielectrics are used for photovoltaic (PV) applications (anti-reflection, passivation, insulation and masking layers) usually applied on large surfaces often presenting a texture or an important roughness. The application range of such a layer can heavily suffer from uncontrolled pinhole density. Therefore four pinhole characterization techniques have been compared regarding their relevance for current PV dielectric characterization. Two of these techniques present a good potential for the qualitative and quantitative pinhole characterization of especially for PV dielectric, on flat and rough surfaces. As a test for the characterization method an evaluation of the impact of aluminum evaporation on thick PECVD SiOx pinhole density has been performed. This shows the ability of the characterization technique developed in this paper to perform quantitative pinhole characterization.