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Amorphous silicon passivation applied to the front side boron emitter of n-type silicon solar cells

: Richter, A.; Benick, J.; Hermle, M.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-1435979 (263 KByte PDF)
MD5 Fingerprint: 56e5940dde70fb4acf0948ce6a822277
Created on: 11.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Hydrogenated amorphous silicon (a-Si:H) was used to passivated the front side boron emitter of n-type silicon solar cells. The main aspect was to investigate the parasitic absorption behavior of the a-Si:H layers on the solar cells front side with different thicknesses between 5 nm and 20 nm. Therefore planar solar cells featuring a diffused boron emitter and a diffused back surface field were fabricated. The cells reached energy conversion efficiencies up to 17.8% with an open- circuit voltage VOC of 641 mV for an a-Si:H thickness of 15 nm. Analogous processed reference cells, with an Al2O3 passivated emitter achieved an efficiency of 19% and a VOC of 658 mV.