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Passivation of screen-printed aluminium-alloyed emitters for back junction n-type silicon solar cells

: Rauer, M.; Schmiga, C.; Hermle, M.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-1435900 (402 KByte PDF)
MD5 Fingerprint: cc4efe2362469a72c08f17157ef05e26
Created on: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

We present a detailed study on effectively surface-passivated aluminium-doped p+ emitters to further enhance the efficiency of our n-type silicon solar cells featuring a full-area screen-printed Al-alloyed rear emitter. We investigated two different passivation layers both well suited for highly doped p+ silicon: plasma-enhancedchemical- vapour-deposited amorphous silicon (a-Si) and atomic-layer-deposited aluminium oxide (Al2O3). We show that for an effective emitter passivation (i) a careful preparation of the emitter surface and (ii) low emitter thicknesses are essential. Combining these two aspects, we have achieved extraordinary high implied open-circuit voltages of 673 mV for a-Si- and 679 mV for Al2O3-passivated Al-alloyed emitters, corresponding to emitter saturation current densities of 128 fA/cm2 and 89 fA/cm2, respectively.