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High-reliability MOCVD-grown quantum dot laser

Hoch zuverlässiger mit MOCVD gewachsener Quantenpunkt-Laser
 
: Sellin, R.L.; Ribbat, C.; Bimberg, D.; Rinner, F.; Konstanzer, H.; Kelemen, M.T.; Mikulla, M.

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Electronics Letters 38 (2002), No.16, pp.883-884
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
GaAs; III-V semiconductor; III-V Halbleiter; indium compounds; Indium-Verbindung; MOCVD; quantum-well laser; Quantentopflaser; reliability; Zuverlässigkeit; quantum-dot; Quantenpunkte; epitaxy; Epitaxie

Abstract
4.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50degreesC heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm(2) on the front facet.

: http://publica.fraunhofer.de/documents/N-14358.html