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Influence of different laser parameters in laser doping from phosphosilicate glass

: Okanovic, M.; Jäger, U.; Ahrens, M.; Stute, U.; Grohe, A.; Preu, R.

Fulltext urn:nbn:de:0011-n-1435388 (561 KByte PDF)
MD5 Fingerprint: 32a70ac418a2e636e00674b71a58175c
Created on: 18.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

The choice of laser parameters for a laser doping process [1, 2] is investigated. Solid state lasers with different pulse- and wavelengths were used for laser doping. Sheet resistances and silicon bulk lifetimes of irradiated samples are presented. Additionally, secondary ion mass spectroscopy (SIMS) profiles of the laser processed samples were acquired. Emitter saturation current density J0e data of lowly doped and laser doped emitters are shown. Scanning electron microscope images of laser processed random pyramids surfaces at different pulse lengths are shown and compared.