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Impact of solar cell manufacturing processes on thermal oxide-passivated silicon surfaces

: Mack, S.; Wolf, A.; Wotke, E.A.; Lemke, A.; Holzinger, B.; Dimitrova, T.; Biro, D.; Preu, R.

Fulltext urn:nbn:de:0011-n-1435329 (199 KByte PDF)
MD5 Fingerprint: d841089e9ca9945e1199bab12056ff67
Created on: 18.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

In this paper, we investigate the impact of a solar cell fabrication process on the properties of thermal oxide-passivated Si surfaces. Therefore, symmetric thermally oxidized silicon wafers are exposed to the cell process and analyzed by means of quasi steady-state photoconductance and capacitance-voltage-measurements. The oxide thickness reduces during processing. Alkaline texturing, diffusion and firing processes are shown to decrease the effective carrier lifetime. Moreover, the total charge density decreases and the interface trap density at midgap increases along the manufacturing process. The latter complies with the observed reduction of the effective carrier lifetime. Nevertheless this process induced degradation of the oxide passivation is fully reversible with aluminum deposition and subsequent annealing in forming gas. After a post-metallization anneal, on saw damage etched surfaces of 1 ?cm p-type floatzone material, surface recombination velocities of less than 50 cm/s are measured.