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Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band

Potential von metamorpen HEMTs mit 0.2µm Refractory-Metall-Gates für Power-Anwendungen in Ka-Band
: Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G.

GaAs MANTECH Conference 2002. Digest of papers : April 8 - 11th 2002, Sheraton San Diego Hotel and Marina, San Diego, California, USA. Compound semiconductor manufacturing: new challenges, great opportunities
St. Louis: GaAS MANTECH Inc., 2002
ISBN: 1-893580-03-2
International Conference on Compound Semiconductor MANufacturing TECHnology (GaAs MANTECH) <17, 2002, San Diego/Calif.>
Conference Paper
Fraunhofer IAF ()
metamorphic; metamorph; HEMT; refractory metal; Refractory-Metall; spacer process; Spacerprozess

Metamorphic high electron mobility transistors (MHEMT) on 4-inch GaAs substrates, with a 0.25 µm refractory metal gate, fabricated by optical stepper lithography and SiN sidewalls spacer, are demonstrated for power application. Single recess MHEMT exhibits a reverse gate to drain breakdown voltage of - 11.5 V, a saturation current density of 680 mA/mm and a fT of 83 GHz at a drain bias of 1 V. At 30 GHz, the device produced an output power of 395 mW/mm with a maximal power added efficiency of 29 %. A maximum output power of 455 mW/mm and 8 dB maximum power gain has also been demonstrated with the device at 30 GHz.