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High-field step-stress and long term stability of PHEMTs with different gate and recess lengths

Hochfeld-Stufentest und Langzeitstabilität von PHEMTs mit unterschiedlichen Gate und Recess-Weiten
: Cova, P.; Menozzi, R.; Dammann, M.; Feltgen, T.; Jantz, W.


Microelectronics reliability 42 (2002), No.9-11, pp.1587-1592
ISSN: 0026-2714
Journal Article
Fraunhofer IAF ()
reliability; Zuverlässigkeit; InAlAs/InGaAs PHEMT; hot electron; heißer Ladungsträger; life time; Lebensdauer; power PHEMT; Leistungs-PHEMT; breakdown voltage; Durchbruchspannung; accelerated aging; beschleunigter Alterungstest

The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability.