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Laser ablation of etch resists for structuring and lift-off processes

: Knorz, A.; Grohe, A.; Preu, R.

Fulltext urn:nbn:de:0011-n-1433202 (333 KByte PDF)
MD5 Fingerprint: a2d403d761c0b78b7bc10c223a425001
Created on: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Structuring of dielectric and metal layers as well as silicon itself are key processes in the production of silicon solar cells. In this paper we suggest selective structuring of etch resist and organic lacquers by laser ablation as a general structuring approach. This approach is a simple and fast way of creating small structures in an etch resists or a precursor for lift- off processes. Two possible applications for laser structured organic lacquers will be presented in this paper. One application includes the structured etch resist technology for the electrical isolation of an aluminum layer acting as a rear side metallization for back contacted cells, the other is based on a lift-off application leading to a process sequence for a front side metallization. Since etch resist absorbs light at wavelengths in the infrared regime (2 - 10 ?m) which are not absorbed in silicon the chance of damaging the wafer by choosing an appropriate laser system can be reduced. To this point high efficiency solar cells with Ps-FF of up to 83.1 % and VOC of 661 mV were fabricated.