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Industrial negatively charged c-Si surface passivation by inline PECVD AlOx

: Kania, D.; Saint-Cast, P.; Wagenmann, D.; Hofmann, M.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-1433175 (168 KByte PDF)
MD5 Fingerprint: 203875e4bc70e7e73663df4238818e83
Created on: 18.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A high-rate plasma-enhanced chemical-vapor-deposition (PECVD) process for aluminium oxide layers was developed at low temperatures to reduce minority carrier recombination on p-type c-Si surfaces. A maximum effective surface recombination velocity Smax of 10 cm s-1 was obtained on highly doped (1 ? cm) p-type substrates. The optical constants n and k, the atomic composition of the layer, the surface charge density Qox and the interface defect density Dit of the PECVD AlOx layers were measured. Our main goal was to transfer the aluminium oxide deposition process from ALD technique to an industrial inline PECVD system with the aim to implement highquality field-effect passivation into a large and fast deposition system applicable in the industry. PECVD of AlOx can be transferred to already existing industrial inline systems to allow for a fast spreading of the technology. Excellent passivation quality can be obtained with AlOx PECVD deposition with deposition rates at least one order of magnitude higher compared to ALD. First cell results applying a close-to-industry approach with screen-printed front and rear metallisation on CZ-Si substrates (1252 mm2) showed VOC values above 630 mV.