Options
2009
Conference Paper
Titel
Towards a-Si:H rear passivated industrial-type silicon solar cells
Abstract
Amorphous hydrogenated silicon (a-Si:H) has already been shown to allow for excellent surface passivation of crystalline silicon surfaces. The implementation of this passivation layer system into an industrial LFC-PERC-type cell (applying screen-printed front contacts) was so far hindered by the limited thermal stability of the a-Si:H passivation quality. This paper shows that an excellent passivation is possible if plasma etching and a-Si:H deposition are performed after the screen-printing and firing of front contacts when a phosphorus emitter with sufficient phosphorus content is present during firing. This phosphorus-doped layer efficiently getters impurities. Effective surface recombination velocities far below 100 cm/s are demonstrated. Hence, the use of a-Si:H based rear passivation for industrial application seems possible.