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All-screen-printed 120-µm-thin large-area silicon solar cells applying dielectric rear passivation and laser-fired contacts reaching 18% efficiency

: Gautero, L.; Hoffmann, M.; Rentsch, J.; Bitnar, B.; Sallese, J.-M.; Preu, R.

Fulltext urn:nbn:de:0011-n-1433018 (155 KByte PDF)
MD5 Fingerprint: 152c8f67c46f6c67348ff67b1aa1b0f9
Created on: 11.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Market demand for a lower price per Wattpeak asks for the development of solar cell designs with low production costs and high performance. One approach to reach high efficiency with a solar cell structure containing a diffused emitter on a p-type silicon wafer is to implement a PERC structure on the rear [1]. This structure becomes advantageous to the standard screen printed solar cell when its production cost stays comparable to the latter’s and offers higher efficiency [2]. Since this technique can inherently be applied to thinner wafers, reduced material consumption offers an additional advantage. The purpose of this work is to analyse the solar cells resulting from a production sequence able to create a PERC structure on thin silicon wafers using steps available in the PV industry or at least close to industrial application and estimate further sound improvements. This approach, at its current state of the art, achieves on Czochralski (Cz) wafers of 120 ?m thickness a stable efficiency of 18.0 %.