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2010
Journal Article
Titel
Modeling of the effective work function instability in metal/high-kappa dielectric stacks
Abstract
This paper discusses the effective work function instability in high-kappa-based MOS gate stacks, which occurs after high temperature (1070 degrees C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The V-fb roll-off effect is also discussed and can be described by the model.