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Modeling of the effective work function instability in metal/high-kappa dielectric stacks

: Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Journal of applied physics 107 (2010), No.12, Art. 124514, 5 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IISB ()

This paper discusses the effective work function instability in high-kappa-based MOS gate stacks, which occurs after high temperature (1070 degrees C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The V-fb roll-off effect is also discussed and can be described by the model.