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2010
Journal Article
Titel
Submicron resolution carrier lifetime analysis in silicon with Fano resonances
Abstract
Defect rich regions in multicrystalline silicon are by Raman spectroscopy at high and low injection levels. analyzing the Fano type asymmetny and the spectral of the first order Raman peak crucial properties such as combination lifetime, doping density and -stress can be tracted simultaneously. Due to the small wavelength of the excitation laser thhe spatial resolution of these measurements is significantly below 1 mu m which gives new insight into thhe impact of defects on the carrier recombination lifetime. The results are evaluated by comparing them to micro-photoluminescence and synchrotron X-ray fluorescence measurements.
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