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The small-signal forward characteristics of saturated semiconductors

 
: Noll, P.

Nachrichtentechnische Zeitschrift : NTZ 24 (1971), No.9, pp.454-60
ISSN: 0027-707X
German
Journal Article
Fraunhofer HHI ()
bipolar transistors; electric impedance measurement; semiconductor switches; telephone switching equipment; small signal forward characteristics; small signal resistance; p-n-p-n structures; saturated semiconductors; wideband crossbar switches; different bipolar semiconductor switches; diodes; transistors; 2.5 KHz to 10.0 MHz; intrinsic base resistance

Abstract
The applicability of different bipolar semiconductor switches for wideband-crosspoints is studied; the ideal differential small-signal resistance of diodes, transistors and pnpn-structures is calculated. Measurements in the range from 2.5 kHz to 10.0 MHz show that the total impedance of these semiconductors is often influenced by portions of the intrinsic base resistance on the total impedance.

: http://publica.fraunhofer.de/documents/N-14260.html