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A comparison of focused ion beam and electron beam induced deposition processes

 
: Lipp, S.; Frey, L.; Lehrer, C.; Demm, C.; Pauthner, S.; Ryssel, H.

:

Groeseneken, G.:
7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 1996. Proceedings : 8 - 11 October 1996, Enschede, The Netherlands
Oxford: Pergamon, 1996 (Microelectronics and reliability 36.1996, Nr.11/12)
ISBN: 0-7803-3369-1
ISSN: 0026-2714
pp.1779-1782
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <7, 1996, Enschede>
English
Conference Paper, Journal Article
Fraunhofer IISB ()

Abstract
Focused ion and electron beams are used for local deposition of conducting or insulating films. Major applications are integrated circuit design edit, prototype modification, repair of masks, and machining of microsystems. In this paper, the dependence of the deposition rates versus the beam parameters for both, ion beam and electron beam induced deposition were investigated and compared with each other. At the same time, a more precise consideration of the influence of secondary electrons on the deposition process was accomplished.

: http://publica.fraunhofer.de/documents/N-141415.html