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Modification of field emitter array tip shape by focused ion-beam irradiation

 

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Journal of vacuum science and technology B. Microelectronics and nanometer structures 14 (1996), No.3, pp.1973-1976
ISSN: 0734-211X
ISSN: 1071-1023
English
Journal Article
Fraunhofer IISB ()

Abstract
Tip shapes of Si field emitter arrays, fabricated by a conventional dry etching process, have been modified by focused ion-beam (FIB) irradiation to obtain a sharp cone shape. Flat-topped Si tips could be sharpened by localized sputtering using FIBs for a short time. Tip shape inspections and repairs were also performed using a FIB system combined with an electron-beam column to remove metal residues and melted emitters.

: http://publica.fraunhofer.de/documents/N-141411.html