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Electro-optical light modulation in InGaAsP/InP double heterostructure diodes

 

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Applied Physics Letters 42 (1983), No.8, pp.692-4
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical modulation; optical waveguides; semiconductor diodes; quadratic electrooptical light modulation; linear electrooptic coefficient; InGaAsP/InP double heterostructure diodes; double heterostructure waveguides; p-n junction; electroabsorption

Abstract
The linear electro-optic coefficient r41 was determined in quarternary double heterostructure waveguides containing a p-n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=-1.4*10-10 cm/V. A strong quadratic electro-optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.

: http://publica.fraunhofer.de/documents/N-14106.html