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1983
Conference Paper
Titel
Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures
Abstract
The fabrication of long rig-waveguides in the InGaAsP system with low loss suitable for integrated optics has been demonstrated. Furthermore, the authors showed, for the first time, electrooptical light modulation in Q-layers and determined the linear (Pockels effect) and quadratic (Kerr Effect) electrooptic effect. The linear electrooptic effect, r41, is independent of wavelength and composition with a value of r41=-1.4*10-10 cm/V over the limited range of measurement, which is extended in respect to earlier experiments. A strong quadratic electrooptic effect has been identified, which strongly depends on the bandgap and photon energy, as does the associated electroabsorption (Franz-Keldysh) effect.
Language
English
Tags
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electro-optical devices
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optics
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kerr electro-optical effect
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optical modulation
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optical waveguides
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pockels effect
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InGaAsP-InP double heterostructures
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light guiding
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iii-v semiconductor
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linear electrooptic effect
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quadratic electrooptic effect
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franz keldysh effect
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fabrication
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long rig-waveguides
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low loss
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q-layers
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kerr effect
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bandgap
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photon energy
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electroabsorption