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1984
Journal Article
Titel
A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Abstract
Describes an open diffusion technique with a thin vacuum-deposited Zn3P2 layer covered by an Al2O3 layer, Zn diffusion in (100) n-InP single crystals by this techniques was studied and degradation-free surfaces were obtained. The diffusion profiles were measured. With high-temperature diffusion, p+-p--n junctions were obtained; at lower temperature, abrupt p+-n junctions were found. A planar diffused InGaAsP/InP lateral p-n-p transistor was produced using this technique.
Language
English
Tags
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bipolar transistors
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diffusion in solids
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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p-n heterojunctions
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vacuum deposited coatings
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zinc compounds
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vacuum deposited film
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iii-v semiconductor
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open diffusion technique
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zn3p2 layer
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al2o3 layer
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zn diffusion
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n-InP single crystals
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diffusion profiles
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p+-p--n junctions
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abrupt p+-n junctions
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InGaAsP/InP lateral p-n-p transistor