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Diffused planar InP bipolar transistor with a cadmium oxide film emitter

: Su, L.M.; Grote, N.; Schmitt, F.

Electronics Letters 20 (1984), No.18, pp.716-7
ISSN: 0013-5194
Journal Article
Fraunhofer HHI ()
bipolar transistors; iii-v semiconductors; indium compounds; cdo sputtered layer; iii-v semiconductor; InP bipolar transistor; zn-diffused base; transparent conductor widegap emitter; planar technology; monolithic integration

A novel bipolar InP transistor is demonstrated which comprises a Zn-diffused base and a transparent conductor widegap emitter made of sputtered cadmium oxide. Preliminary current gain was about 10. Owing to its less demanding planar technology the device is assessed to be promising for monolithic integration.