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An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode

 

IEEE Electron Device Letters EDL-6 (1985), No.1, pp.14-17
ISSN: 0741-3106
ISSN: 0193-8576
English
Journal Article
Fraunhofer HHI ()
bipolar transistors; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; integrated optoelectronics; 1.5 micron laser diode; InGaAsP/InP double-heterojunction bipolar transistor; monolithic integration; CdO film; wide-gap emitter; sputter deposition; current gain; inverted mode

Abstract
A double-heterostructure InGaAsP/InP bipolar transistor is described which comprises a CdO film as a wide-gap emitter made by sputter deposition. A current gain as high as 40 has been achieved. The transistor can also be operated in an inverted mode with the CdO layer acting as collector. The main feature of this transistor is the structural compatibility with a 1.5- mu m double heterojunction (DH) laser allowing for monolithic integration.

: http://publica.fraunhofer.de/documents/N-14070.html