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Molecular beam epitaxy of III-V compounds

: Kunzel, H.

Physica. B & C, Physics of condensed matter, atomic, molecular and plasma physics, optics 129 (1985), No.1-3, pp.66-80
ISSN: 0378-4363
ISSN: 0165-1757
European Solid State Device Research Conference (ESSDERC) <14, 1984, Lille>
Conference Paper
Fraunhofer HHI ()
iii-v semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; epitaxial growth; molecular beam epitaxy; thickness; doping profile; iii-v semiconductor films; epitaxial superlattice structures

A new technique for epitaxial growth of thin semiconductor films, molecular beam epitaxy (MBE), provides superior control over composition, thickness and doping profile in the direction of growth on an atomic scale. Electrical and optical properties of III-V semiconductor films grown by MBE have been improved quite recently. Thus, the MBE technique offers the feasibility of tailoring new epitaxial superlattice structures with promising future device applications.