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Modification to the HP 4274/75A LCR meters for investigation of device admittance under heavy forward bias conditions

: Bach, H.G.; Dressler, W.


Review of scientific instruments 56 (1985), No.6, pp.1265-8
ISSN: 0034-6748
ISSN: 1089-7623
Journal Article
Fraunhofer HHI ()
doping profiles; electric admittance measurement; meters; semiconductor device testing; semiconductor diodes; hewlett packard; schottky diodes; p-n junctions; ga0.046in0.954as0.1p0.9 diodes; lcr meters; device admittance; heavy forward bias conditions; hp 4274a; hp 4275a; semiconductor device characterization; component test; series resistance; bias filtering circuit; admittance measurements; low-ohmic samples; reduced apparent capacitance; doping concentration; bias regulating circuit

The HP 4274A and HP 4275A LCR meters are widely used in the fields of semiconductor device characterization and component test. A bias voltage can be applied to the test samples either from an external power supply or from the built-in HP-IB controllable voltage source. The total series resistance of the bias filtering circuit should be in the range of about 100 Omega (HP 4275A). Detailed measurements and checking the measuring circuit diagrams revealed that the effective series resistance can be much higher, depending on the measuring range of the bridge. Therefore, admittance measurements on low-ohmic samples, especially Schottky or pn junctions under heavy forward bias conditions, are seriously affected by bias voltage reduction between the front HI/LOW terminals. Thus, e.g., a reduced apparent capacitance is measured. Consequently, the doping concentration near the pn junction will be determined erroneously. To avoid the effects, a bias regulating circuit is inserted into the LCR meters to guarantee the feedthrough of the bias voltage without any attenuation. Examples of admittance vs. frequency and doping profiles near the pn junction of quaternary (Ga0.046In0.954As0.1P0.9) diodes are given for explanation.