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Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes

 
: Grosskopf, G.; Kuller, L.

:

Optical and Quantum Electronics 17 (1985), No.4, pp.269-75
ISSN: 0306-8919
ISSN: 1572-817X
English
Journal Article
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; laser mode locking; optical modulation; semiconductor junction lasers; stability; single mode operation; injection-locked InGaAsP/InP laser diodes; optical wide-band transmission link; injection locking; side-mode suppression; detunings; master laser; slave laser; modulation; bias current variations; optical feedback

Abstract
Single-mode operation of the laser is a basic condition in an optical wide-band transmission link. Lasers stabilized by injection locking showed excellent side-mode suppression. Slight detunings within the locking range between the master laser and slave laser caused by modulation, bias current variations or optical feedback led to unstable behaviour and disturbed the BER of a 1.12 Gbit s-1 transmission experiment via a 21-km single-mode fibre.

: http://publica.fraunhofer.de/documents/N-14052.html