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Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser

 
: Sugimura, A.; Patzak, E.; Meissner, P.

:

Journal of Physics. D. Applied Physics 19 (1986), No.1, pp.7-16
ISSN: 0022-3727
English
Journal Article
Fraunhofer HHI ()
electron-phonon interactions; gallium arsenide; iii-v semiconductors; semiconductor junction lasers; electron electron interactions; polarisation relaxation; linewidth enhancement factor; GaAs semiconductor laser; homogeneous linewidth; gain coefficient; carrier density

Abstract
The homogeneous linewidth and the linewidth enhancement factor alpha for a room-temperature GaAs laser are studied, calculating the time constant for the relaxation of the polarisation. The homogeneous linewidth obtained, arising from electron-electron and electron-phonon interactions, is of the order of several meV. It depends on carrier density and photon energy. The gain coefficient and the alpha -parameter are calculated using this homogeneous linewidth. The value of alpha -depends strongly on the photon energy, ranging from two to eight. Its value at maximum-gain wavelength becomes smaller for conditions of higher carrier density.

: http://publica.fraunhofer.de/documents/N-14031.html