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1986
Journal Article
Titel
Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser
Abstract
The homogeneous linewidth and the linewidth enhancement factor alpha for a room-temperature GaAs laser are studied, calculating the time constant for the relaxation of the polarisation. The homogeneous linewidth obtained, arising from electron-electron and electron-phonon interactions, is of the order of several meV. It depends on carrier density and photon energy. The gain coefficient and the alpha -parameter are calculated using this homogeneous linewidth. The value of alpha -depends strongly on the photon energy, ranging from two to eight. Its value at maximum-gain wavelength becomes smaller for conditions of higher carrier density.