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Characteristics of double-heterojunction InGaAsP/InP bipolar transistors

 
: Grote, N.; Su, L.M.; Bach, H.-G.

Institute of Physics, Bristol:
Gallium arsenide and related compounds 1985. Proceedings
London, 1986 (Institute of Physics - Conference Series 79)
ISBN: 0-85498-170-5
pp.583-588
International Symposium on Gallium Arsenide and Related Compounds <12, 1985, Karuizawa>
English
Conference Paper
Fraunhofer HHI ()
bipolar transistor; gallium arsenide; iii-v semiconductors; indium compounds; temperature dependence; double-heterojunction InGaAsP/InP bipolar transistors; current/voltage; gain; switching

Abstract
Double-heterojunction InGaAsP/InP bipolar transistors comprising a double-layer n-InGaAs/N-InP collector structure to overcome a pronounced gain reduction at low collector bias voltages have been characterized in terms of current/voltage and gain properties, including their dependence on temperature. Preliminary results on switching behaviour are given in addition.

: http://publica.fraunhofer.de/documents/N-14011.html