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1986
Conference Paper
Titel
Electro-optic modulators in GaInAsP/InP
Abstract
The semiconductor material system InGaAsP on InP is being increasingly used for waveguide based electro-optic devices such as phase modulators, directional coupler modulators, and switches with the long term goal of opto-electronic monolithic integration. The authors have demonstrated the fabrication of long passive rib waveguides (RWG) with low optical losses (3dB/cm) in this material. Electro-optical light modulation was achieved employing a p-n junction. The linear, quadratic and cubic term of the electro-optic effect could be identified. Design rules for high efficiency modulators are proposed.
Language
English
Tags
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electro-optical devices
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optics
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optical losses
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optical modulation
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optical waveguides
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electro optic modulators
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design
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semiconductor
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phase modulators
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directional coupler modulators
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switches
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fabrication
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passive rib waveguides
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p-n junction
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high efficiency
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GaInAsP-InP