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Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen

Hetero solar cell, has indium-tin-oxide layer arranged on amorphous silicon layer, and tunnel passivation layer i.e. aluminum oxide layer, attached between front side surface of crystalline silicon layer and emitter layer
 
: Pysch, D.; Glunz, S.

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Frontpage ()

DE 102008045522 A: 20080903
DE 102008045522 A: 20080903
H01L0031
German
Patent, Electronic Publication
Fraunhofer ISE ()

Abstract
(A1) Die Erfindung betrifft eine Heterosolarzelle, die Silizium, dotierte Siliziumschichten und Tunnelpassivierungsschichten enthaelt. Diese ist durch eine Indium-Zinn-Oxid-Schicht auf der Vorderseite und durch eine Aluminiumschicht auf der Rueckseite abgeschlossen. Weiterhin umfasst die Erfindung ein Verfahren zur Herstellung von Heterosolarzellen.

 

DE 102008045522 A1 UPAB: 20100312 NOVELTY - The cell (1) has an emitter layer (12) arranged on a front side surface of a crystalline silicon layer (7). The emitter is formed from a p-doped amorphous silicon layer (4) opposite to the crystalline silicon layer, and an indium-tin-oxide (ITO) layer (3) with a front side contact (2) and an aluminum layer (8) that is arranged on a rear side surface. The ITO layer is arranged on the amorphous silicon layer. A tunnel passivation layer (6) i.e. aluminum oxide layer, is attached between the front side surface of the crystalline silicon layer and the emitter layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a hetero solar cell. USE - Hetero solar cell. ADVANTAGE - The tunnel passivation layer is attached between the front side surface of the crystalline doped silicon layer and the emitter layer, thus providing the solar cell to be robust relating to high interfacial defect density and short-circuit of texture pyramid spikes, enabling faster processing of the solar cell, and manufacturing the solar cell in a cost-effective manner while eliminating undoped intrinsic amorphous layer. The design of the solar cell greatly reduces requirements for pre-cleaning of the crystalline doped silicon layer, and eases requirement for a soft plasma deposition.

: http://publica.fraunhofer.de/documents/N-139639.html