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Lumineszenzscanner sowie Verfahren zur Detektion von Lumineszenz in Halbleiterbauteilen

Luminescence scanner for spatially resolved determination of physical characteristics of semiconductor component, has analyzing unit determining physical properties of semiconductor component from detected spatially resolved luminescence
 
: Glatthaar, M.; Rein, S.; Haunschild, J.

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Frontpage ()

DE 102008052223 A: 20081017
DE 102008052223 A: 20081017
G01N0021
H04N0001
H01L0021
German
Patent, Electronic Publication
Fraunhofer ISE ()

Abstract
(A1) Vorliegende Erfindung betrifft einen Lumineszenzscanner zur ortsaufgeloesten Bestimmung physikalischer Eigenschaften von Halbleiterbauteilen, wie beispielsweise Siliziumwafern oder Solarzellen, insbesondere Eigenschaften wie Serienwiderstand, Lebensdauer, Materialqualitaet und/oder den ortsaufgeloesten Parallelwiderstand derartiger Bauteile. Vorliegende Erfindung betrifft ebenso ein Verfahren zur Detektion dieser ortsaufgeloesten Eigenschaften mit Hilfe des Lumineszenzscanners.

 

DE 102008052223 A1 UPAB: 20100506 NOVELTY - The scanner (1) has a single-line lighting unit for excitation of luminescence in a semiconductor device. A detector (4) i.e. indium gallium arsenide charge coupled device (CCD) camera, is provided for spatially resolved detection of luminescence emitted by a semiconductor component. An analyzing unit i.e. electronic computing unit, determines physical properties of the semiconductor component from the detected spatially resolved luminescence. A lighting unit (3a) illuminates the semiconductor device with light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for detecting physical characteristics of a semiconductor component by a luminescence scanner. USE - Luminescence scanner for spatially resolved determination of physical characteristics of a semiconductor component. ADVANTAGE - The indium gallium arsenide charge coupled device (CCD) camera increases the spatial resolution of a picture, achieves a higher quantum efficiency and reduces the time for determining the physical characteristics of the semiconductor component. The camera has long life span.

: http://publica.fraunhofer.de/documents/N-139599.html