Options
Title
Verfahren zur Herstellung einer Siliziumkarbid-Epitaxieschicht und eines Siliziumkarbid-Bauelementes
Date Issued
2008
Author(s)
Patent No
102008046026
Abstract
DE 102008060372 A1 UPAB: 20100323 NOVELTY - The method for producing a silicon carbide-epitaxial layer on a single crystalline silicon carbide substrate by chemical gas phase deposition, is claimed. The silicon carbide substrate has low error orientation of 2-6 degrees . The deposition is carried out from a gas phase with a carbon/silicon ratio of 0.75 and a growth rate of 7 mu m/h at 1600 degrees C, a pressure of 125 hPA and a gas total flow of 60 l/min. The single crystalline silicon carbide substrate is a single crystalline n- or p-conductive silicon carbide substrate or epi-ready single crystalline silicon carbide substrate. DETAILED DESCRIPTION - The method for producing a silicon carbide-epitaxial layer on a single crystalline silicon carbide substrate by chemical gas phase deposition, is claimed. The silicon carbide substrate has low error orientation of 2-6 degrees . The deposition is carried out from a gas phase with a carbon/silicon ratio of 0.75 and a growth rate of 7 mu m/h at 1600 degrees C, a pressure of 125 hPA and a gas total flow of 60 l/min. The single crystalline silicon carbide substrate is a single crystalline n- or p-conductive silicon carbide substrate or epi-ready single crystalline silicon carbide substrate. A second conductive silicon carbide epitaxial layer is deposited on the silicon carbide epitaxial layer so that the second silicon carbide epitaxial layer has a dopant concentration as the first silicon carbide epitaxial layer and has a conductive type that has a conductive type opposite to the silicon carbide epitaxial layer. A basal plane dislocation thickness of less than 3 cm-2 is obtained by depositing in the silicon carbide-epitaxial layer. The deposition of the silicon carbide epitaxial layer is carried out so that the silicon carbide epitaxial layer is n-conductive and the deposition of the second conductive silicon carbide epitaxial layer is carried out so that the second conductive silicon carbide epitaxial layer is p-conductive so that a pn-transition zone is formed between the n-conductive silicon carbide epitaxial layer and the second p-conductive silicon carbide epitaxial layer. The single crystalline silicon carbide substrate has the error orientation in the crystalline direction of (11-20). INDEPENDENT CLAIMS are included for: (1) a method for the production of silicon carbide component; and (2) a silicon carbide component. USE - Method for producing a silicon carbide-epitaxial layer on a single crystalline silicon carbide substrate for the production of a silicon carbide component such as pin diodes, PN-diode, Schottky diode, junction-field-effect-transistor, MOSFET, metal-semiconductor field-effect transistor or bipolar-silicon carbide component (all claimed), which is useful for the fabrication of high temperature electronic devices. ADVANTAGE - The method ensures rapid, reliable and economical production of the silicon carbide component with high thermal conductivity and improved blocking voltages in an easier manner without crystal defects.
Language
de
Patenprio
DE 102008046026 A1: 20080905