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Plasma mass spectrometric analysis and control of reactive ion etching of InP and related compounds

 
: Schmid, H.

British Association of Crystal Growth:
6th International Conference on Ion and Plasma Assisted Techniques 1987 : Brighton, UK, May 1987
Edinburgh: CEP Consultants, 1987
ISBN: 0-905941-18-7
pp.98-102
International Conference on Ion and Plasma Assisted Techniques <1987, Brighton>
English
Conference Paper
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; mass spectra; sputter etching; neutral products; semiconductor; reactive ion etching; in situ determination; plasma species; mass spectroscopy; surface reactions; ionic products; etching rate; production formation; inp

Abstract
The authors report on the investigation of mechanisms involved in the reactive ion etching of InP and related compounds by in situ determination of plasma species using mass spectroscopy. Gas phase and surface reactions can be distinguished by different neutral and ionic products. A correlation between the etching rate of InP and the amount of production formation is obtained.

: http://publica.fraunhofer.de/documents/N-13939.html